摘要
采用Auger线型分析方法因子分析方法和已知组元强度的定量解谱技术,对电子束辅助N离子注入Si和磁控溅射方法制备的TiNx薄膜的高分辨率俄歇电子能谱(AES),进行了定量分析.
Two Auger line shapes analysis methods, the factor analysis method and the quantitative determination method of the intensities of known components, were applied to the quantitative determination of TiN x films and the composition depth profiles of N implanted in Si assisted by electron beams. The effects of chemical states on Auger line shapes and the effective and applicable ranges are discussed here.
出处
《大连理工大学学报》
EI
CAS
CSCD
北大核心
1997年第2期147-153,共7页
Journal of Dalian University of Technology
基金
国家自然科学基金
关键词
俄歇电子谱法
定量分析
线型分析
薄膜
Auger electron spectrometry
films
quantitative analysis/Auger line shapes analysis