射频磁控溅射沉积SiO_2膜的研究

Studies of SiO 2 films deposited by RF magnetron sputtering

研究以射频磁控溅射法在Ｓｉ衬底上沉积ＳｉＯ２膜．这一方法避免了高温氧化法对器件性能的损害．在结构和物理性能上对ＳｉＯ２进行了多方面的测试和分析．结果表明，ＳｉＯ２膜具有：１）微晶结构，结构致密、表面均匀、无针孔等．２）优良的物理性能，腐蚀速率（在Ｐ腐蚀液中）０．２０～０．２４ｎｍ／ｓ，击穿场强２．６×１０７～４．４×１０７Ｖ／ｃｍ．可以得出结论：射频磁控溅射法沉积的ＳｉＯ２膜与热氧化法沉积的ＳｉＯ２膜具有相同的物理性质．

SiO 2 films deposition on Si substrate by RF magnetron sputtering are studied. This method can avoid the destruction to the characteristics of the devices by high temperature thermal oxidation. The structural and physical characteristics of the films are investigated. The results indicate that the SiO 2 films 1) are microcrystal with dense structure and uniform surface without pin holes; 2) have excellent physical propertiesP etch rate :0.20 0.24 nm/s, breakdown field indensity: 2.6×10 7 4.4×10 7 V/cm. So the authors have drawn the conclusion that SiO 2 films by RF magnetron sputtering have the same physical charasteristics as those by the thermal oxidation.