离子注入形成FeSi_2埋层的电镜研究

Research on formation of buried FeSi 2 layer by ion beam synthesis and TEM

利用ＭＥＶＶＡ离子源将Ｆｅ离子注入到Ｓｉ基体中会生成一层铁硅化物薄膜．利用电子显微镜，研究了这层铁硅化物的显微结构及其在随后的升温退火过程中发生的变化．研究结果表明，在离子注入剂量为１×１０１７／ｃｍ２的未退火样品中，亚稳的γ－ＦｅＳｉ２相占大多数，同时有少量的由ＣｓＣｌ结构派生的缺陷相Ｆｅ１－ＸＳｉ．在（１００）取向的Ｓｉ片上，这个硅化物层埋在硅基体中。

Iron silicide films have been formed by metal vapour vacuum arc (MEVVA) ion implantation of iron into (100) oriented silicon wafers. In the ion implanted samples with a dose of 1×10 17 /cm 2, metastable γ FeSi 2 is the dominant phase accompanied by a small fraction of the Cs Cl derived defect phase Fe 1-X Si. The thickness of silicides embedded in (100) silicon substrate is at a depth of 25 nm.