摘要
介绍了一种射频宽带低噪声放大器的设计过程,包括稳定性分析、偏置电路设计和匹配电路设计等内容。设计采用E-PHEMT晶体管(ATF-55143)器件模型和其他元件模型。通过采用ADS技术进行电路和电磁仿真,结果表明设计的放大器完全满足性能指标要求。
A RF broadband low noise amplifier（LNA） design is introduced. The design includes stability analysis, bias networks design, matching networks design and so on. The E - PHEMT transistor （ ATF - 55143 ）model and some other electronic components are adopted in this design. With ADS technology, the simulation of circuit and EM is performed and the result shows that the amplifier can meet the performance requirements.
出处
《电讯技术》
2007年第3期98-100,共3页
Telecommunication Engineering
关键词
宽带低噪声放大器
电路设计
仿真
broadband low noise amplifier（LNA）
circuit design
simulation
