碳离子束注入辅助蒸发低温沉积DLC薄膜研究

Study of DLC Films by Carbon Ion Beam Implantation Assisted Vapor Deposition

采用碳离子束注入辅助蒸发技术低温沉积了DLC薄膜,对薄膜沉积的工艺参数进行了优化,并对该薄膜的摩擦学行为进行了探讨。研究发现:碳离子束注入辅助蒸发技术沉积的DLC薄膜在离子量为3.0×1017ions/cm2,沉积率为0.1nm/s时具有最小的摩擦因数(<0.1);电流为2.0mA比3.0mA条件下所沉积的DLC薄膜表面光滑;磨损试验后,DLC薄膜的表面只有轻微磨损的痕迹。

DLC films by C^＋ ion beam implantation assisted vapor deposition at low temperature were prepared,the parameters were optimized, and the tribological behavior was discussed. It is found DLC films prepared by C^＋ ion beam implantation assisted vapor deposition have a lowest friction coefficient （ 〈0. 1 ） when ion dose was 3.0 × 10^17 ions/cm^2 and deposition rate was 0. 1 nm/s ; the DLC film is more smooth when ion beam current was 2.0 mA than 3.0 mA ; the friction experiment shows the worn surface of DLC film is smooth,the clear wear groove don＇ t occur.