磁过滤阴极弧法TiN薄膜的制备及其微观机械性能研究

Preparation and Micro-mechanical Behavior of TiN Thin Films Deposited by Filtered Cathodic Arc Plasma Method

采用“S”型磁过滤阴极弧等离子体沉积技术,室温下在(111)面单晶硅上沉积氮化钛薄膜。采用AFM和XRD技术分别对薄膜的表面形貌和晶体择优取向进行了表征,并用微刻划的方法分析薄膜的微观机械性能。结果表明,薄膜表面光滑致密,随偏压的增大,表面颗粒粒径先增大后减小,并且从(111)面的择优取向转变成(220)面。在刻划实验中,随载荷增加,薄膜先后经历了完全弹性变形,弹-塑性变形和脆性断裂阶段。利用直接和间接2种方法对得到的薄膜的临界载荷进行分析对比,发现在不同负偏压下,薄膜的内应力和临界载荷不同。随着负偏压的增大,薄膜的内应力逐渐增大,临界载荷逐渐减小。在-100V偏压下制备的氮化钛薄膜的微观机械性能最为理想。

TiN thin films were deposited on （ 111 ） silicon substrate at room temperature by using tilted cathodic arc plasma system. Atomic force microscopy （AFM） and X-ray diffraction （XRD） were used to characterize the surface morphology and crystalline orientation of TiN films deposited at different bias. It is concluded that the TiN films are smooth and dense. With the negative bias increased, the particle size increases first and then decreases, and the preferred crystalline orientation transforms from the （111 ） to （220） orientation. The micro-mechanical properties were analyzed by microscratch tests. Three processes including fully elastic recovery, elastic-plastic deformation and delamination of the films were occurred during the scratching tests. The results show that the critical load （Lc） is related closely with the intrinsic stress of TiN films, and the Lc decreases with the stress increased. The micro-mechanical property of the TiN film deposited under negative bias of - 100 V is superior to others.