基于数值模拟的扇形分裂漏磁敏场效应晶体管相对灵敏度研究

Research of the Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor Based on Numerical Simulation

使用二维数值模拟求得了扇形分裂漏磁敏场效应晶体管(MAGFET)的相对灵敏度.通过有限元分析求解约束载流子输运的偏微分方程,描绘出沟道反型层中的静电势分布.磁场中扇形MAGFET的电流偏转量大于相应矩形MAGFET的电流偏转量,因此扇形MAGFET与已报导的矩形MAGFET相比具有灵敏度高的优势.模拟结果表明极长沟道器件的灵敏度几乎不变.所研制的N型沟道分裂漏MAGFET采用0.6μm标准CMOS工艺制造,实测扇形MAGFET的最高灵敏度为3.77%/T.该数值模拟方法及其计算结果已用于CMOS磁敏传感器芯片的设计.

Two-dimensional numerical simulation was used to obtain the relative sensitivity of sector splitdrain magnetic field-effect transistor （MAGFET）. Partial differential equations governing the carrier transport are solved through a finite element analysis. Distribution of electrostatic potential could be depicted in the inversion layer of the channel. The current deflection of sector MAGFET is greater than that of rectangular MAGFET in the presence of a magnetic field. Therefore, the sector MAGFET has the advantage of a higher sensitivity compared with rectangular MAGFET that has been reported. Simulation results suggest that sensitivities are almost constant for devices with very long channels. N-channel split-drain MAGFETs are fabricated with a 0.6/μm standard CMOS technology, and the maximum sensitivity of sector MAGFET is 3.77%/T in the experiment. The simulation method and its result have been applied to design a CMOS magnetic sensor IC.