Cd_(1-x)Zn_xS体系红外光谱及发射率特性

Infrared Spectrum and Emissivity Characteristic of Cd_(1-x)Zn_xS

制备了Cd1-x，ZnxS三元系半导体材料。利用X射线衍射（XRD）对其结构进行了表征，结果表明实验所得样品均为纤锌矿结构。建立了Cd1-xZnxS混晶替位模型，根据所建模型和晶格振动理论，对Cd1-xZnxS红外光谱特性进行探讨。研究了Cd1-xZnxS三元系半导体材料红外发射率特性，Cd1-xZnxS在3～5μm波段的发射率远远低于8～14μm波段的发射率，这与材料的红外吸收机制和光谱特性有关；Cd1-xZnsS半导体材料的红外发射率随着烧结温度的提高而降低，这是由于温度升高，晶格畸变减小并逐渐趋近于完整晶格。

The semiconductor material of Cd1-xZnxS is synthesized and the structures are characterized by XRD. The result demonstrates that the products are all hexagonal. The mixer lattice model of Cd1-x ZnxS is established and the characteristic of the infrared spectrums is explained according to the model and lattice vibration theory. The infrared emissivity characteristic of Cd1-xZnxS is researched. It is manifested that the emissivity at 3-5 μm wave band is much lower than that at 8-14 μm, it is because of the infrared absorption mechanism and spectrum characteristic. The infrared emissivity decreases with the increase of the reaction temperature. It is because that with the increase of the reaction temperature, the crystal lattice distortion reduces and the lattice tends to be integrated.