基于场效应管开关阵列的GEM探测器读出方式

Pixel readout for GEM detectors based on switched field effect transistor array

为实现探测器信号成像要求,研究一种气体电子倍增膜(gas electron multiplier,GEM)探测器的读出方法。采用印刷电路技术,将读出电极盘与场效应管的分立元件组合构成阵列,通过场效应管开关阵列,读出GEM探测器信号,并实现成像。实测表明:该方法的动态范围(最大信号与噪声高宽的比值)可达7.3×104,积分非线性小于0.324%,灵敏度为2.55 V/nC,可实现30帧/s的实时成像。该方法具有制作工艺简单、参数可调、成本低等优点,为随后采用厚膜技术及薄膜场效应管技术读出GEM探测器提供了重要的设计依据。

A pixel readout for image formation was developed using gas electron multiplier （GEM） detectors. A switched array of pads and field effect transistors was constructed from single elements on a printed circuit board. Tests show that the dynamic range （ratio of maximum signal to full width at half maximum, FWHM, of noise） reaches 7.3 × 10^4, the integral nonlinearity is less than 0. 324%, the sensitivity is 2.55 V/nC, and the system can work in real time at 30 frames/s. This readout is simple, flexible, and low cost, and can be implemented using thick-film technology and thin film transistor technology.