高压VDMOS电容的研究

Study on the Capacitance of High Breakdown Voltage VDMOS

本文主要研究了VDMOS电容的组成,详细分析了Ciss、Coss和Crss这3个VDMOS电容参数的定义和各自对应的特性,并从模拟上着重分析了沟道长度和栅氧厚度对电容的影响.文中提出一种反馈电容较低的VDMOS新单元结构,在相同的尺寸条件下,新结构单元Qg*Rdson的优值较之传统型设计显著下降.

This paper describes that the composites of VDMOSFET capacitances are researched and gives out how to define the Ciss, Coss and Crss. The characteristics of these capacitances are also presented. How the channel length and the gate oxide thickness dominate the VDMOSFET capacitances were also analyzed by software simulation. Through the simulation result, a new device structure was proposed and compared effectively the parameter of Qg＊ Rdson with the traditional VDMOS structure.