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纳米级工艺制程仿真SenTaurus Process的应用

Application of Nano-Level Integrated Process Simulation Tool SenTaurus Process
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摘要 基于Synopsys Inc.最新推出的新一代nm级IC制程工艺设计工具--SenTaurus Process,实现了CMOS架构的nm级NMOS制程的工艺级可制造性设计。仿真结果体现了SenTaurus Process的强大功能和使用SenTaurus Process进行工艺级可制造性设计的必要性。 Based on the elementary functions of the new generation nano-level IC process design tool: SenTaurus Process issued recently by Synopsys Inc, nano-level NMOS process level DFM based on CMOS framework was realized. Simulated results reveal the powerful functions of Sen- Taurus Process and the necessity of technology-level design for manufacturing using SenTaurus Process.
出处 《微纳电子技术》 CAS 2007年第6期295-298,311,共5页 Micronanoelectronic Technology
关键词 集成电路 纳米层次 工艺仿真 可制造性设计 IC nano-level process simulation design for manufacturing (DFM)
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参考文献6

  • 1Sentaurus Process user guide[K].Version Y-2006.06,2006.
  • 2YEO K S,ROFAIL S S,GOH W L.CMOS/BiCMOS ULSI:Low Voltage,Low Power[M].北京:电子工业出版社,2003.
  • 3甘学温 黄如 刘晓彦.纳米CMOS器件[M].北 京:科学出版社,2004..
  • 4MURAKAMI E,YOSHIMURA T,GOTO Y,et al.Gate length scalability of n-MOSFETs down to 30 nm:comparison between LDD and non-LDD structures[J].IEEE Electron Devices,2000,47(4):835-840.
  • 5SHIH C H,CHEN Y M,LIEN C.Design strategy of loca-lized heavy doped halo profile for achieving sub-50 nm bulk MOSFET[C]//IEEE Conference on Electron Devices and Solid-State Circuits.2003:39-42.
  • 6CHAKRABORTY S,MALLIK A,SARKAR C K,et al.Impact of halo doping on the subthreshold performance of deepsubmicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications[J].IEEE Electron Devices,2007,54(6):241-248.

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