摘要
用磁控溅射法在Pt/Ti/SiO2/Si衬底上沉积Ba0.65Sr0.35TiO3薄膜.研究沉积气压和衬底温度对BST薄膜结构及介电性能的影响.应用XRD和AFM表征薄膜的物相结构及其表面形貌,通过阻抗分析仪测量薄膜的介电性能.结果表明在3.0 Pa沉积气压和600℃衬底温度下制备的Ba0.65Sr0.35TiO3薄膜有较好的微结构和介电性能.
The Ba0. 65 Sr0. a5 TiO3 thin films were deposited on Pt/Ti/SiO2/Si substrate by magnetron sputtering technology. The influence of deposition pressure and substrate temperature on the microstructure and dielectric properties was investigated. The phase structure and surface morphologies of the BST thin films were characterized by XRD and AFM. The dielectric properties were measured using impedance analyzer. The results show that the BST films deposited at 3.0 Pa and 600℃ have the best microstructure and dielectric properties.
出处
《湖北大学学报（自然科学版）》
CAS
北大核心
2007年第2期160-163,共4页
Journal of Hubei University：Natural Science
基金
湖北省自然科学基金(2001ABA094)资助课题
关键词
BST薄膜
磁控溅射
介电性能
BST thin films
magnetron sputtering
dielectric properties
