摘要
针对混合掺杂情况下的半导体材料,运用费米分布函数对其载流子浓度进行计算,推导出了一般情况下的电中性方程,对所推导出的电中性方程进行计算机数值求解,得到了对应不同材料、不同掺杂浓度、不同温度时的载流子浓度。对于计算中可能出现的溢出问题进行了妥善处理,并采用预划分积分区间的办法,加快了费米积分的计算速度。文中所提出的计算方法对于简并半导体和非简并半导体均适用。
For the mix-impurity semiconductor, with Fermi-Dirac statistics, a general neutrality equation is deduced and the concentration of the carrier is calculated corresponding to different materials, different temperatures and different doping levels. Special steps are taken to solve the overflow problem, and the pre-division integral interval method expedites the Fermi calculation speed. The mentioned method is suitable to both the non-degenerate and degenerate semiconductors.
出处
《长春工业大学学报》
CAS
2007年第2期165-168,共4页
Journal of Changchun University of Technology
关键词
载流子浓度
数值计算
混合掺杂
carrier concentration
numerical calculation
mix-doped semiconductors.
