离化团簇束法制备c轴取向的ZnO薄膜

An Ionized Cluster Beam(ICB) Deposition Equipment Used to Make c-Axis Oriented ZnO Thin Films

为了探索低温可调控ZnO薄膜沉积技术,提出了一种新的ZnO薄膜制备方法,即离化团簇束(ICB)法,并自行设计研制了应用该方法制备ZnO薄膜的专门装置.采用超音速喷嘴获得高速锌原子团簇束,用Hall等离子体源产生氧离子束离化锌原子团簇,获得了较高的离化率.在沉积过程中,可以通过调节衬底偏压、氩氧比、衬底加热温度等参数,来控制成膜的质量;应用这个装置成功地在硅衬底上制备的ZnO薄膜,经XRD和EDS检测,薄膜的c轴取向一致,Zn、O原子百分比接近于1∶1,成膜质量好.

An ionized cluster beam （ICB） deposition equipment used to make ZnO thin films is introduced in this paper. The Hall ion source is employed to ionize the high speed Zn cluster beams generated by a supersonic air spout. Substrate bias voltage and temperature, the proportion of Ar/O can be changed to adjust and control the deposition of the ZnO thin films. After the equipment was set up and debugged, the ZnO thin film with good quality and highly c-axis oriented was obtained on silicon substrate, by ICB technique.