基于垂直层叠结构的可见/近红外双波段传感器研究

Visible/Near IR Double Wave Band Sensor Based on Vertically Stacked Structure

提出了基于垂直层叠结构的双波段传感器,该结构为同时对可见波段和近红外波段进行成像提供了可能。它的基本原理是利用不同波长的光在硅材料中穿透深度的非线性分布,即：短波长的可见光主要在表面被吸收,长波长的近红外光则主要在更深的位置被吸收。通过垂直层叠结构,抽取不同深度的光生载流子,即可以得到相应波段的成像信息。数值仿真分析表明,结构参量为D1=2μm,D2=18μm的结构能在400-1200 nm波长范围得到响应峰值波长为550 nm和1000 nm的最佳可见/近红外响应。

A novel double wave band sensor based on vertically stacked structure is proposed. It provides the possibility to obtain images in visible/near IR spectrum simultaneously. Its basic principle is to use silicon material＇s differences of penetration depths of electromagnetic waves with different wavelengths, i.e., visible light with short wavelength mainly absorbed at surface while near IR light with longer wavelength mainly absorbed at deeper location, Through extraction of photocarriers at different depths, images corresponding to their spectrums are obtained. The analysis of results from numerical simulation shows that the device with structure parameters of D1 =2 μm, D2 = 18 μm give best visible/near-IR response with peak values at 550 nm and 1000 nm in the imaging wavelength of 400-1200 nm.