过渡层对Ge衬底GaAs外延层晶体质量的影响

Effect of Buffer Layer on GaAs Epitaxial Layer Quality on Ge Substrate

利用低压金属有机化学汽相淀积(MOCVD)设备在Ge衬底上生长GaAs外延层。通过改变GaAs过渡层的生长温度对GaAs外延层进行了表征,利用扫描电镜(SEM)和X射线衍射仪研究了表面形貌和晶体质量,优化出满足高效太阳能电池要求的高质量GaAs单晶层生长条件。

GaAs epitaxial layer was grown on Ge substrate by low pressure metal organic chemical vapor deposition method. GaAs epitaxial layer was charactorized by changing the growth temperature of GaAs buffer layer. The surface morphology and crystal quality of the epitaxial layer were studied by using scanning electronic microscope （SEM） and X-ray diffractometer. The growth condition of high crystal quality GaAs for high efficiency solar cell is optimized.