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有机铁电P(VDF-TrFE)薄膜极化疲劳特性 被引量：2

Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films
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摘要 本文研究了有机铁电薄膜的极化疲劳过程。研究发现,随着疲劳过程的深入,薄膜铁电峰的峰位逐渐向高电压方向偏移,而薄膜的极化-电压滞洄线也逐渐变得圆滑,且剩余极化值随之下降。进一步的研究表明,只有双极性电压才能导致铁电疲劳的出现,而双极性电压的频率直接影响铁电疲劳速率:频率越高,疲劳越慢。文中对有机铁电疲劳机理做了初步探讨。 In this paper we report the studies on polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. It is found that, with the increasing number of polarization switching, the voltage corresponding to ferroelectric switching of polarization - voltage hysteresis loops is strongly peak gradually shifts towards higher voltage, the shape modified and becomes rounded, and the remanent polarization is also gradually decreased. Furthermore, experimental results indicate that only bipolar electrical stressing can cause ferroelectric fatigue and the fatigue rate is frequency dependent： the lower the frequency, the higher the fatigue rate. The origin of ferroelectric fatigue in ferroelectric polymers is discussed.
作者 朱国栋 曾志刚 张莉 严学俭
机构地区 复旦大学材料科学系
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2007年第3期289-292,共4页 Journal of Functional Materials and Devices
关键词 铁电聚合物 极化疲劳 陷阱电荷 ferroelectric polymer polarization fatigue trapped charges
分类号 O484.42 [理学—固体物理] O482.41 [理学—固体物理]
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参考文献13

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共引文献3

同被引文献14

  • 1朱国栋,徐敬,严学俭,李杰,曾志刚,沈淼,张莉.P(VDF-TrFE)铁电膜微观铁电压电特性研究[J].功能材料与器件学报,2006,12(4):269-274. 被引量：4
  • 2Seok Hwan Nob, Wonjun Choi, Min Suk Oh, D. K. Hwang, Kimoon Lee, and Seongil Ira. ZnO -based nonvol- atile memory thin - ?lm transistors with polymer dielectric/ ferroelectric double gate insulators [ J ]. Applied Physics Letters, 200?, 90(25) :253504.
  • 3Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im. Flexible low voltage nonvolatile memory tran- sistors with pentacene channel and ferroelectric polymer [ J ]. Applied Physics Letters, 2009, 94 (9) :093304.
  • 4Sung - Min Yoon, Shinhyuk Yang, Chunwon Byun, Sang - Hee K. Park, Doo - Hee Cho, Soon - Won Jung, OhSang Kwon, Chi - Sun Hwang. Fully Transparent Non - vol- atile Memory Thin - Film Transistors Using an Organic Fer- roelectric and Oxide Semiconductor Below 200℃ [ J]. Ad- vanced Functional Materials, 2010, 20:921- 926.
  • 5J Li. The Study of the Switching Process in FerroelectricPolymers[D]. Konstanz university, Germany, 1994.
  • 6Youn Jung Park, Jiyoun Chang, Seok Ju Kang, Cheolmin Park. Polarization retention of thin ferroelectric poly, vinyli- dene uoride - co - trifluoroethylene film capacitors [ J ]. Ap- plied Physics Letters, 2009, 95(10) :102902.
  • 7D. Dimes, W. L. Warren, M. B. Sinclair, B. A. Tut- tie, R. W. Schwartz. Photoinduced hysteresis changes and optical storage in ( Pb, La) ( Zr, Ti) 03 thin films and ce- ramics[ J ]. Journal of Applied Physics, 1994, 76 ( 7 ) : 4305.
  • 8Y. Arayashiki, T. Nakajima, Y. Takahashi, T. Furuka- wa. Accelerated polarization reversal in a copalymer of vinylidene fluoride and trifluoroethylene[ C]. Proceedings of the 12th International Symposium on Electrets ISE 12 ( IEEE, Piscataway, 2005 ) : 159-160.
  • 9M. Grossmann, O. lmhse, D. Bohen, U. Boettger, T. Schneller. The interface screening model as origin of im-print in PbZrxTil? x03 thin films. 1. Dopant, illumina- tion, and bias dependence [ J ]. Journal of Applied Phys- ics, 2002, 92(5) :2680 ~2687.
  • 10I. Lazareva, Y. Koval, P. Mailer, K. Mailer, K. Hen- kel, D. Schmeisser. Interface screening and imprint in poly( vinylidene fluoride/trifluoroethylene) ferroeleetric field effect transistors [ J ]. Journal of Applied Physics, 2009, 105(5) :054110.

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功能材料与器件学报
2007年 第3期

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