期刊文献+

中波双色光伏型HgCdTe红外探测器模拟研究 被引量:17

NUMERICAL MODELING OF MIDDLE WAVELENGTH TWO-COLOR PHOTOVOLTAIC HgCdTe DETECTORS
下载PDF
导出
摘要 基于二维数值模型,对光伏型中波(MW1/MW2)HgCdTe双色红外探测器作了模拟计算,器件采用n-p-p-p-n结构、同时工作模式.计算了双色器件光谱响应及量子效率,重点分析了两个波段间的信号串音问题,以及高组分势垒层的作用.模拟结果显示,MW1(中波1,波长较短)对MW2(中波2,波长较长)的串音是辐射透过MW1区在MW2区中吸收引起的,串音与光吸收比近似成正比,而载流子扩散效应可以忽略不计.高组分阻挡层对载流子扩散引起的串音有显著的抑制作用,如果没有势垒层,载流子扩散引起的串音十分明显,甚至成为串音的主导因素.对于60×60μm2探测单元MW1和MW2的结电容大约为1.75pF/pixel. The performance of two-color middle wavelength infrared photovoltaic HgCdTe detector was simulated numerically based on a two-dimensional model. The structure of n-p-p-p-n was designed in simultaneous mode. The spectral response, quantum efficiency, and junction capacitance were calculated, and the crosstalk between two bands and the function of barrier layer were analyzed in detail. The calculation results show that the infrared radiation transmitted through MW1 (shorter wavelength in middle wavelength band) diode can be absorbed in MW2 (longer wavelength in middle wavelength band) diode, and this causes MWI-to-MW2 crosstalk. The crosstalk is linearly depended on the ratio of radiation absorbed in MW2 diode to that in MW1 diode. The barrier layer can remarkably suppress the crosstalk caused by photocarriers diffusion. Without the barrier layer, the MWI-to-MW2 crosstalk will increase as large as 10 times, and is dominated by photocarriers diffusion. The junction capacitance of MW1 and MW2 diode is about 1.75F/pixel for 60 ×60μm^2 detector.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2007年第3期164-169,共6页 Journal of Infrared and Millimeter Waves
基金 国家重点基础研究发展规划资助项目(2004CB619004) 国家自然科学基金资助项目(10234040 60244002)
关键词 碲镉汞 中波双色红外探测器 光谱响应 串音 结电容 .HgCdTe two-color infrared detector spectral response crosstalk junction capacitance
  • 相关文献

参考文献12

  • 1Rogalski Antoni. Infrared detectors: status and trends [J]. Progress in Quantum Electronics. 2003, 27: 59-210.
  • 2贾嘉,陈贵宾,龚海梅,李向阳.室温短波碲镉汞结区的LBIC方法研究[J].红外与毫米波学报,2005,24(1):11-14. 被引量:10
  • 3叶振华,胡晓宁,蔡炜颖,陈贵宾,廖清君,张海燕,何力.激光束诱导电流在HgCdTe双色探测器工艺检测中的应用[J].红外与毫米波学报,2005,24(6):459-462. 被引量:6
  • 4Jo N H, Yoo S D, Ko B G, et al. Two-dimensional numerical simulation of HgCdTe infrared detectors [J]. SPIE, 1998, 3436: 50-60.
  • 5Jozwikowski K, Rogalski A. Computer modeling of dualband HgCdTe photovoltaic detectors [J]. J. Appl. Phys. , 2001,90(3) : 1286-1291.
  • 6Ferret P, Zanatta J P, Hamelin R, et al. Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays [J]. J. Electron. Mater. , 2000, 29 (6) : 641-647.
  • 7叶振华,吴俊,胡晓宁,巫艳,王建新,丁瑞军,何力.集成式HgCdTe红外双色探测器列阵[J].红外与毫米波学报,2004,23(3):193-196. 被引量:10
  • 8Selberherr Seigfried. Analysis and simulation of semiconductor devices [M], Austria: Spinger-Verlag Wien New York Press, 1984, 41-42.
  • 9Chu Jun-Hao, Li Biao, Liu Kun, et al. Empirical rule of intrinsic absorption spectroscopy in Hg1-xCdxTe[J]. J. Appl. Phys. , 1994, 75(2) :1234-1235.
  • 10Schacham S E, Finkman E. Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects [J]. J. Appl. Phys. , 1985, 57(6) : 2001-2009.

二级参考文献20

  • 1叶振华,吴俊,胡晓宁,巫艳,王建新,丁瑞军,何力.集成式HgCdTe红外双色探测器列阵[J].红外与毫米波学报,2004,23(3):193-196. 被引量:10
  • 2贾嘉,陈贵宾,龚海梅,李向阳.室温短波碲镉汞结区的LBIC方法研究[J].红外与毫米波学报,2005,24(1):11-14. 被引量:10
  • 3汤定元 童斐明.窄禁带半导体红外探测器,半导体器件研究与进展Ⅱ[M].北京:科学出版社,1991.1-107.
  • 4Rogalski A. Infrared detectors: Status and Trends [J]. Progress in Quantum Electronics, 2003, 27:59-210.
  • 5Musca C A, Redfern D A, Dell J M, et al. Laser beam induced current as a tool for HgCdTe photodiode characterization[ J]. Microelectronics Journal, 2000,31:537-544.
  • 6CAI Wei-Ying. The characteristics of imaging spectrum for infrared devices [D]. Shanghai: Doctor's dissertation of Shanghai Institute of Technical Physics, 2003:53-100.
  • 7Jacques I Pankove. Optical Processes in Semiconductors [M]. New Jersey: Prentice-Hall, 1971: 303-335.
  • 8Redfern D A, Thomas J A, Musca C A , et al. Diffusion length measurements in p-HgCdTe using laser beam induced current [J]. Journal of Electronic Materials, 2001,30(6):696-703.
  • 9Antoni Rogalski. Dual-band infrared focal plane arrays [J].SPIE, 2000, 4340:1-14 .
  • 10Zanatta J P, Ferret P, Loyer R, et al. Single and two color infrared focal plane arrays made by MBE in HgCdTe [J]. SPIE, 2000, 4130:441-451.

共引文献22

同被引文献191

引证文献17

二级引证文献80

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部