摘要
采用低温反应射频溅射法在微晶玻璃上沉积了一层具有择优取向的氮化铝薄膜，再在其上沉积８０Ｎｉ－２０Ｃｒ电阻网络。对电阻网络进行了功率老化、高温存贮、热冲击等可靠性试验。
A layer of C axis preferably oriented AlN film is deposited on a crystallite glass through RF sputtering, on which resistor networks with 80% Ni 20%Cr is evaporated. Reliability tests such as power aging, storage at high temperature, thermal shock and short time overloading show that the properties of AlN film resistor networks have been significantly improved due to the excellent thermal conductivity and passivity.
出处
《电子元件与材料》
CAS
CSCD
1997年第3期23-27,共5页
Electronic Components And Materials
基金
国家自然科学基金
