两段式半导体激光器的双稳条件

Conditions for Bistability in Two segment Semiconductor Lasers

对Ｋｕｚｎｅｔｓｏｖ采用的速率方程加以修正，考虑了俄歇效应的影响，载流子寿命不再作为常数处理，而写成载流子浓度的函数。由此导出了两段式半导体激光器存在双稳的必要条件，计算结果表明，吸收区偏置电流对双稳条件影响极大，对具体器件而言，若增益区和吸收区隔离电阻不够大，几个ｍＡ的偏置电流泄露到吸收区就使器件难以产生双稳。

Based on modified rate equations, conditions for bistability in two segment semiconductor lasers have been deduced. Effects of Auger coefficient and bias current of the absorber segment on bistability are discussed.