L波段150W宽带硅脉冲功率晶体管

L-band 150 W Broadband Silicon Pulsed Power Transistors

设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。该器件采用掺砷多晶硅发射极，同时具备有覆盖和树枝状两种图形结构的优点。器件引入扩散电阻和分布式多晶硅电阻组合而成的发射极复合镇流电阻，实现对发射极电流二次镇流，器件表现出良好的微波性能和高的可靠性。经内匹配，在L波段脉冲输出大于100W（36V），脉宽150μs，工作比10％，增益大于7．5dB，效率大于45％，器件最大输出达150W（42V）。

A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed. The devices using As doped polysilicon emitter have the advantages of overlay structure and tree structure simultaneously. The complex emitter ballasting resistor is provided by diffused silicon resistor and distributed polysilicon resistor,and so called dual emitter ballasting can be carried out by using the complex ballasting resistol. The devices show excellent microwave performance and relial,ility. Internally matched devices have output power,gain and efficiency greater than 100 W(36 V), 7- 5 dB and 45 %,respectively,for pulsewidth of 150 μs and duty cycle of 10% in the designed frequency range. And its maximum output power up to 150 W(42 V).