深亚微米沟道δ掺杂NMOSFET结构特性和设计

Design and Performance of Deep－Submicron MOSFET's with δ－Shaped Channel Doping Profiles

利用能量输运模型（ＥＴＭ）系统研究了沟道δ掺杂分布对深亚微米ＭＯＳＦＥＴ结构特性的影响；发现δ掺杂结构不仅能够有效地抑制短沟道效应，而且可以获得较高的驱动速度，改善了掺杂容限特性；只要δ掺杂峰值浓度离界面保持一定距离，则热电子产生率无明显增长；提出的δ掺杂分布适用于０．１μｍＭＯＳＦＥＴ，与均匀掺杂相比，它具有较高的综合品质因子．

Based on the energy transport model (ETM), the influence of δ-shaped dopingprofiles on deep-submicron MOSFET performance is systematically investigated. It is discoveredthat δ-shaped doping configuration can not only effectively suppress short-channel effects,but alsocan provide high driving capability with improved doping fluctuation tolerances. Simulationsdemonstrate that the incorporation of δ-shaped doping will not result in noticeable increase in thehot-electron generation rate as long as the peak doping is placed for a desired distance away the Si/SiO2 interface. The proposed δ doping profile for 0. lμm MOSFET's exhibits even higher figure ofmerits than the uniform substrate doping.