1450nm半导体激光治疗痤疮临床疗效观察

Treatment of acne with 1 450 nm diode laser

目的:探讨1450nm半导体激光对痤疮的疗效及安全性。方法:应用1450nm半导体激光对44例中、重度痤疮患者进行一侧面部治疗,激光光斑为6mm,剂量为8～12J/cm2,动态冷却(DCD)时间为20～30ms。结果:治疗3、4次后,痤疮皮损分别减少67.3%与88.1%,与对照侧相比,差异有统计学意义。术后局部无色素沉着。结论:1450nm半导体激光治疗痤疮安全而有效。

Objective： To investigate the clinical response of acne to 1 450 nm diode laser. Methods： Split face treatment was performed on 44 patients with moderate to severe acne by 1 450 nm diode laser at the fluence of 8-12 J/cm^2 and spot size of 6mm, DCD （dynamic cooling device） duration being 20-30 ms. Results： After 3 and 4 sessions of treatment acne lesion decreased by 67.3% and 88.1%, respectively. There was significant difference as compared to the control side. Side effects such as postoperative hyperpigmentation was not observed. Conclusion： 1 450 nm diode laser was both safe and effective for treating acne.