电子辐照SiO_2能量沉积计算方法研究

Calculation of energy deposition in electronically irradiated SiO_2

将二氧化硅分子等价成一个原子，以其等价原子序数和原子量为主要参量建立了一个系统的能量沉积计算体系，仿真计算了0．1～1MeV平行平面电子束垂直辐照二氧化硅时的能量沉积．因计算需要定义了2个新函数Q（z）和W（z），分别用来描述电子能量和数量传输系数的变化快慢，对其的仿真结果可直观地描述电子在二氧化硅中的沉积规律．该研究结果可为研究电子辐照二氧化硅时的最佳能量选择提供参考．

A method for calculating energy deposition by irradiating electrons is suggested in which the molecule of SiO2 is considered equivalent to an atom and its equivalent atomic number and atomic weight are used as major parameters. Energy deposition in SiO2 by a plane-parallel electron beam of 0.1 ~ 1 MeV at right angles to the SiO2 was calculated and then simulated. To calculate electron energy deposition, two functions, and , were defined to describe changing electron velocity and energy, and the transmission coef- ficient. Simulation results show calculations by this method conform to the energy deposition law of irradiating electrons. This study provides a basis for the choice of optimal electron energy levels in research on electronically irradiated SiO2.