气相生长氮化铝单晶的新方法

A Novel Method for Growing AlN Single Crystal by Physical Vapor Transport

通过在钨坩埚盖开小孔的方法改变氮化铝结晶衬底上的温度场分布,在开孔处形成局部低温区;由于孔的几何尺寸的限制和氮化铝晶体生长的各向异性,开孔处的氮化铝晶体单晶化;随后,开孔处的单晶起籽晶的作用,逐渐长成较大尺寸、较高质量的氮化铝单晶。目前用该方法已经制备出直径大于2mm的氮化铝单晶体。

Temperature distribution in the lid is changed by drilling a little hole in the tungsten crucible lid. By this way, a low temperature local section on the lid is offered. A self-seeded AIN single crystal is grown due to the anisotropic growth property of A1N crystals and limitation of the hole. In the following growth process, the crystal as a seed becomes a large size and high quality single crystal. By this method, AIN single crystals with diameters of larger than 2mm were obtained successfully.