沿[1 ■00]方向升华法生长6H-SiC单晶

Sublimation Growth of 6H-SiC Single Crystal along [1 ■00] Direction

本文采用升华法沿着垂直于c轴方向的[1 ■00]方向生长6H-SiC单晶。利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1 ■00]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷。

6H-SiG single crystals have been grown along the [ 1^-100 ] direction by the sublimation method. The surfaces of crystal and etching wafer were observed by optical microscope. The crystals are different in many aspects from those grown along [0001 ] direction by conventional method. The polytypic structure of crystal grown in the [ 1^-100 ] direction perfectly succeeds to that of the seed, and thus polytype inclusions never occur during growth. The crystal contains no screw dislocations and micropipes.