GaAs微探尖的衬底选择刻蚀法剥离和转移

Peeling and Transferring of GaAs Microtips by Selective Wet Etching Substrate Technique

报道了一种用于制作扫描近场光学显微术(SNOM)传感头的GaAs微探尖的剥离和转移方法—GaAs衬底选择湿法刻蚀技术。利用扫描电子显微镜对转移后的微探尖进行了表征。结果表明,通过此方法能够成功地将GaAs微探尖转移到目标晶片上,并且在剥离和转移过程中微探尖没有受到损伤。这种技术对实现由带有PIN光探测器的垂直腔面发射激光器与GaAs微探尖的混合集成式SNOM传感头有着非常重要的应用价值。

A selective wet etching GaAs substrate method is used to peel off and transfer GaAs microtips for scanning near-field optical microscopy （SNOM） sensors. Scanning electron microscopy （SEM） images show that GaAs microtips can be successfully transferred onto the target wafer and are not damaged during the peeling and transferring process. This technique has practical values in realizing a hybrid integrated SNOM sensor composed by a vertical-cavity surface-emitting laser （VCSEL） with a PIN monitor and a GaAs microtip.