摘要
采用提拉法沿a、b、c轴方向生长了Tm:YAP晶体,研究了该晶体的几种常见缺陷。通过化学腐蚀,利用光学显微镜观察了Tm:YAP晶体主要晶面的位错腐蚀坑形貌,发现在沿b轴生长晶体的(010)面上存在位错蚀坑密度不同的区域,对其成因进行了分析。借助偏光显微镜研究了晶体中的孪晶及消光现象,分析了成因并提出了消除措施。用He-Ne激光对晶体内的散射颗粒分布进行了研究,在扫描电镜(SEM)下观察到形状不规则的散射颗粒夹杂。上述研究结果对获得优质Tm:YAP晶体具有重要意义。
Tm：YAP crystals were grown along a, b and c axis by Czochralski method. Several kinds of defects in the crystal were studied. Chemical corrosion was used to the slices of Tm： YAP crystal and the etch pits were observed by optical microscope. On the （010） plane of Tm：YAP crystal grown along b axis, there are areas with different dislocation etch pits densities and the cause of this distribution was discussed. Twins were observed in the crystal grown along c cause of formation was analyzed. The existence of scattering axis by polarized optical microscope and its centers in the crystals was investigated by He-Ne laser beam and SEM. The study on defects is important for improving the quality of Tm ： YAP laser crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第1期114-118,共5页
Journal of Synthetic Crystals
关键词
Tm:YAP晶体
散射颗粒
化学腐蚀
位错
Tm ： YAP crystal
scattering center
chemical corrosion
dislocation
