硅中微体缺陷激光测试技术的理论与实验研究

THEORETCAL AND EXPERIMENTAL STUDY OF LASER DETECTING TECHNIQNE FOR MICRO BULK DEFECTS IN SILICON

提出了一种基于广义洛伦兹－米氏理论（ＧｅｎｅｒａｌｉｚｅｄＬｏｒｅｎｚ＆ＭｉｅＴｈｅｏｒｙ）的硅中μｍ／ｎｍ级体缺陷的激光无损检测新途径．叙述了有关的理论基础，进行了系统的计算机仿真与特征提取的研究，实现了系统的模拟实验，验证了理论的正确性及方案的可行性．

A novel way of laser detection based on generalized Lorenz and Mie scattering theory was developed, which can detect micro bulk defects in Si material. Its principle was analyzed and a method of characteristics extracting was put forward. Simulating experiments on computer and glass samples were implemented and scattered graph collected in the direction perpendicular to the incident light was processed. Quite satisfactory result was achieved, which demonstrates that the scattering modeling and technique are correct and feasible.