毫米波高电子迁移率晶体管的二维数值模拟

TWO DIMENSIONAL NUMERICAL SIMULATION OF MILLIMETER WAVE HIGH ELECTRON MOBILITY TRANSISTOR

建立了高电子迁移晶体管（ＨＥＭＴ）的二维数值模型，并用二维数值模拟的方法讨论了ＡｌＧａＡｓ／ＧａＡｓＨＥＭＴ中的ＧａＡｓ沟道层量子阱中二维电子气的物理性质．通过自洽求解薛定谔方程和泊松方程获得了沟道中的电子浓度和横向电场．模拟结果表明栅电压的改变对ＨＥＭＴ器件跨导产生很大的影响．

A two dimensional numerical model was presented for the high electron mobility transistor (HEMT). The physical properties of two dimensional electron gas in the quantum well of the GaAs channel layer for AlGaAs/GaAs HEMT were discussed by using the two dimensional numerical simulation. The electron concentration and the electric field in the channel were obtained by solving the Schrodinger’s and Poisson’s equations self consistently. The simulation results show that the transconductance of HEMT changes obviously with the voltage of gate.