信息存储的现状和未来发展

GIANT MAGNETORESISTANCE IN MULTILAYERS

本文着重从磁存储出发讨论了磁光存储，硬磁盘存储的现状和未来发展。沿用传统的驱动器，它们的面存储密度的极限大致在１０Ｇｂｉｔｓ／ｉｎ２的量级，这主要是由存储材料性能和信息存取模式（磁头或光头）的限制。为要进一步提高存储密度，需采取类似近场光学、原子力、磁力和扫描隧道显微镜这样的现代手段来进行信息的存储，但要实现，需要一段较长的时间。在磁存储获得发展的同时，非磁的光存储介质的应用得到了开发，主要是ＣＤ－ＲＯＭ（只读式），ＣＤＲ（写一次）和ＰＤ（相变型）。正是磁和光存储介质在信息存储中的应用，使当今信息技术中一重要领域——信息存储显得生气勃勃。

In this paper the development of physics of giant magnetoresistance in multilayers is reviewed. In order to give a full knowledge of the magnetoresistance in multilayers the behavior of ordinary magnetoresistance and anisotropic magnetoresistance are also briefly discussed. The main part of the paper is to introduce the following content:1.Spin dependent scattering in ferromagnetic metals and multilayers. 2.The recent development of basic research on GMR in multilayers. 3.Various multilayered structures showing GMR. The main applications of GMR is shortly mentioned.