多孔硅形成过程及孔隙率的计算机模拟

Computer Simulation of Formation and Porosity of Porous Silicon

为了用计算机模拟电化学方法制备多孔硅的过程,基于Monte Carlo和扩散限制模型(DLA)建立一种新模型,引入耗尽区范围、腐蚀半径和腐蚀几率等参数,用Matlab来实现.模拟得到了电流密度、HF酸浓度、腐蚀时间以及硅片掺杂浓度等实验条件对多孔硅孔隙率的影响趋势,与实验结果一致,模拟出的孔隙率值也与实验值接近.因此所建立的模型可以用来模拟电化学法制备多孔硅的过程.

To simulate the formation of porous silicon by electrochemistry etching, a new model was built based on Monte Carlo and diffusion limited aggregation （DLA） model. The new model brought in the parameters of exhausted area scope, etching radius, and etching probability, etc, and was executed by Matlab. The relationships between porosity and experimental conditions（current density, HF concentration, etching time, and doping level of the silicon） were simulated, and the results are consistent with the experimental ones. The values of porosity simulated are also close to the experimental ones. So the model built can simulate the process of the formation of porous silicon .