等温化学气相渗透制备碳化硅复合材料的工艺研究

Preparation of SiC Composite with Isothermal Chemical Vapor Infiltration

通过研究等温化学气相渗透(ICVI)工艺的主要影响因素,如渗透温度、前驱气体组分比与流速等,对制件密度的影响规律,为ICVI制备碳化硅复合材料提供了优化的工艺参数。实验表明:渗透温度为1050℃,炉压为6666.2Pa(50乇),反应气体配比Ar/CH3SiCl3(MTS)约为10,仅渗透3h表面的渗透厚度便接近20μm,密度略有增加,渗透效果较好。

In this paper, the influence of main infiltration parameters was studied, such as infiltration temperature, precursor gas flow ratio and rate. The optimized parameters for preparation of SiC composite with isothermal chemical vapor infiltration were given. The result shows that infiltration temperature is 1050℃, infiltration pressure is 6666.2Pa, and precursor gas flow ratio（ Ar/MTS ） is 10. Although the infiltration time is 3 hours, the infiltration thickness is about 20μm, and the density has only a little increase. The infiltration effect is obvious.