磁控弧光增强等离子体CVD(化学气相沉积)法制备立方氮化硼薄膜(英文)

Deposition of c-BN Thin Films by Magnetron Arc Enhanced Plasma Chemical Vapor Deposition

采用一种新的自行设计的磁控弧光增强等离子体化学气相沉积法制备立方氮化硼(c-BN)薄膜.现已成功地在单晶硅上制备出了含量较高的立方氮化硼(c-BN)薄膜.制备出的薄膜用傅立叶红外(FTIR)光谱和 X射线衍射(XRD)谱来表征.同时研究了各个沉积参数(基底直流负偏压、弧光等离子体放电电流、气体流量比)对立方氮化硼薄膜制备的影响.

Cubic boron nitride films were deposited on silicon substrates by self-made magnetron arc enhanced plasma chemical vapor deposition in an Ar-N2-BCl3-H2 system （BC13 was diluted 2 % in N2 base）. By this method, we have successfully deposited the higher c-BN thin film. The characterization of c-BN films was carried out by XRD, FTIR spectroscopy. The effect of direct current bias, plasma discharge current and gas flow ratio on the formation of c-BN films was investigated. The c-BN content in the film changed with the variation of the deposition parameters.