摘要
A two-dimensional （2D） photonic crystal waveguide in the Г-K direction with triangular lattice on a silicon-on-insulator （SOI） substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion （PWE） methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.
A two-dimensional （2D） photonic crystal waveguide in the Г-K direction with triangular lattice on a silicon-on-insulator （SOI） substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion （PWE） methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.
基金
Project supported by the National Natural Science Foundation of China （Grant Nos 60336010 and 60537010）. Acknowledgments The authors would like to thank Dr Han Wei-Hua, Dr Fan Zhong-Chao, and Mr Xing-Bo of the Institute of Semiconductors, Chinese Academy of Sciences, for their useful discussions and great help in the experiment and optical measurements.
