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电子束辐射GeS_2-Ga_2S_3-CdS硫系玻璃的二次谐波发生效应

SECOND HARMONIC GENERATION OF THE GeS_2-Ga_2S_3-CdS GLASS IRRADIATED BY ELECTRON BEAM
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摘要 用熔融-急冷法制备了在可见光区有较高透过率的GeS2-Ga2S3-CdS硫系玻璃,在电子束辐射的玻璃样品中观察到明显二次谐波发生效应,得到了对称性良好的Maker条纹。研究结果表明:当激光入射角在±(40°~50°)左右时,二阶非线性光学效应的相对强度出现最大值。通过表面化学蚀刻法进行了极化机理分析,发现在电子束辐射下,玻璃表面很薄的一层区域内形成局域直流强电场,破坏了玻璃的宏观各向同性,极化区域厚度大于理论计算结果。 Chalcogenide glasses of the GeS2-Ga2S3-CdS system with high transmittance in the visible region were obtained by the melt-quenching method. A prominent second harmonic generation (SHG) was observed from glasses after irradiation by an electron beam, and a Maker-fringe with good symmetry was also gained. The results show that the maximum of relative SHG intensities appears at an incidence angle of laser around +(40 °-50 °). The SHG intensities have a close relationship with the irradiation conditions. The mechanism of polarization was analyzed through the surface chemical etching technique. Under the irradiation of electron beam, a local strong direct current electronic field is formed in a zone of the thin layer of the glass surface, which destroys the macroscopic isotropy of the glass. The thickness of the polarization zone is more than the theoretical calculations results.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2007年第7期918-921,共4页 Journal of The Chinese Ceramic Society
基金 硅酸盐材料工程教育部重点实验室(武汉理工大学)开放基金(SYSJJ2005-13) 国家自然科学基金(50125205)资助项目
关键词 硫系玻璃 二次谐波发生效应 电子束辐射 Maker条纹 化学蚀刻 chalcogenide glass second harmonic generation electron beam irradiated Maker fringes chemical etching
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参考文献10

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