摘要
本文介绍的是自行设计与制造的高度自动化MOCVD装置。该装置设有9路流量控制管路,6路源,1路HCl气源及氯气旁路,装置气密性好,8 kg/cm^2正压时,用Snoop溶液检测无泄露。配有真空机组,反应室可抽至10^(-5)乇。反应室为高频加热,控温精度±0.2℃,有机源冷井控温精度±0.1℃,设有压力,H_2、AsH_3、PH_3报警及自动处置系统,有断水,断电保护,全部控制量均为数字显示,温度及全部流量的设置与调整均实现微机自动控制,配有GaAs,AlGaAs单层及多层结构生长工艺的专用软件,实现完全自动化生长。该装置性能稳定,重复性好,安全可靠,对操作者及环境无危害,设有手动及自动转换开关,适合于科研和生产使用。
A highly automatic MOCVD apparatus has been desingned and manufactured in our lab. There are 9 ways of flow-meter controls, including 6 ways for growth sources and 1 for HCL gas. A bypass of N2 gas is added. The system has such airtightness that under 8 kg/cm2 pressure there's no leakage detected using the Snoop Leakage Detector. The reaction chamber can reach a vacuity of 1.33 × 10-1 Pa when applying the vaccum pump system, and it is heated by a RF generator with temperature accuracy of ±0.2℃. The temperature accuracy of the cold traps of Mo-sources is ±0.5℃. The system can give alarms to over-pressure, leakage of H2 , AsH3, PH3 and can react accordingly through computer to ensut-re safty. The safeguard procedures of power failure and water shortage is also included. The system provides special softwares for mono/multi-layer growth of AlGaAs and GaAs with all the gas flows and temperatures controlled by computer and digitized on the panel of the system.Experiments have seen high stability, reproducibility and safty reliability of the system, which ensure no harm to both the operators and environment. The system can be controlled manually or automatically by a toggle switch to meet the need of eith experimental research or production.
