摘要
提出了P型K_2CsSb+本征Cs_3Sb的结构模型。对制备Sb-K-Cs光电阴极的工艺进行了研究。获得了190μA/lm的积分灵敏度,其长波阈达到8600(?)。
The structure model P-type K2CsSb + intrinsic Cs3Sb have been proposed. The technica al study on processing Sb-K-Cs photocathode have been carried out The integral sensitivity of 190μA/lm was obtained. Its longwave threshold reached 8600A.
关键词
光电阴极
积分灵敏度
长波阈
Photocathodes
Integral sensitivity
Longwave threshold.
