摘要
对超深亚微米PMOSFET器件NBTI效应的失效机理和退化表征进行了讨论。反应-扩散模型是最为广泛接受的NBTI退化机理模型,它有效地解释了阈值电压漂移随时间逐渐饱和以及应力去除后NBTI效应部分恢复的退火现象。用阈值电压漂移量表征了NBTI效应的退化,深入讨论了影响NBTI效应的主要因素:应力作用时间、栅氧电场和温度应力,总结了阈值电压漂移与这些因素的关系,给出了一个经验-逻辑推理公式,对公式中的参数提取后可以得到NBTI寿命值,从而实现NBTI效应的可靠性评价。
The mechanism and characterization of NBTI degradation in ultra deep submicron PMOSFET were discussed. The reaction-diffusion model is the most-accepted NBTI degradation mechanism model, it effectively interprets the phenomenon that threshold voltage shift with stress time saturates and a fraction of NBTI defects can be annealed once the stress is removed. By threshold voltage drift the NBTI degradation was characterized, and based on the research of stress time, oxide field, and temperature stress dependence of NBTI effect, the relation between threshold voltage shift and these factors were summarized, and an empirical-logical expression was given. Extracting parameters in expression could get the NBTI lifetime to evaluate NBTI effect.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第7期562-564,597,共4页
Semiconductor Technology
基金
电子元器件可靠性物理及应用技术国家级重点实验室基金项目(9140C03010107BZ05)
关键词
负偏压温度不稳定性
阈值电压
应力作用时间
栅氧电场
温度应力
NBTI （negative bias temperature instability）
threshold voltage
stress time
oxide field
temperature stress
