三代微通道板记忆效应研究

Research on the Third Generation Microchannel Plate Memory Effect

针对三代微通道板在制作像增强器中出现的电子记忆效应现象进行分析，指出记忆效应的产生机理是通道内壁表面的多孔介质膜（Pb0-A12O3-SiO2系铅铝硅酸盐玻璃）引起的自激发射。分析了多孔介质膜的结构和形成原因，提出了采用调整玻璃材料中SiO2含量、优化金属氧化物的引入种类及数量改进通道内壁结构。工艺上采用减少皮料被酸碱腐蚀的时间和降低还原温度以减少多孔介质膜的形成。实验结果表明，采用新的材料配方，优化的三次酸碱腐蚀和520～560℃氢还原工艺消除了微通道板的记忆效应，提高了像增强器的信噪比。

The phenomenon of electronics memory effect of third generations microchannel plate in process of making image intensifier was analyzed. The mechanism of this phenomenon rooted in self-sustained emission （shortened form SSE） which came from lacunaris dielectric film （PbO-Al2O3-SiO2 series silicate glass） on surface of channel wall. The film configuration and cause of formation were analyzed. The methods including adjusting amount of SiO2 in glass material composition, optimizing material by introducing different types and amount of metallic oxide were adopted to improve the configuration of channel wall. The technics were chosen to depress lacunaris dielectric film formation. These technics and process were formed of decreasing the time of sour-alkali etching to cladding and deoxidizing at lower temperature. The results showed that, by means of the new material composition, three times etching technical （sour-alkali-sour） and 520～560℃ hydrogen deoxidize technics, electronics memory effect of microchannel plate was overcome. The signal-to-noise of image intensifier was improved.