磁控溅射制备参数对ZnO薄膜结构和光学性能的影响

Influence of magnetron sputtering growth parameters on the microstructure and optical properties of ZnO films

采用RF磁控溅射法,在硅(100)衬底上生长出高质量(002)晶面取向的ZnO薄膜.通过XRD和透射光谱研究了射频功率和氧气比例对ZnO薄膜的晶粒尺度、应力状态和光学性能的影响.研究结果显示,射频功率在100W下制备的ZnO薄膜,当氧气比例为60%时,能获得单一c轴择优取向和最小半高宽,压应力最小的薄膜,即结晶性较好的薄膜.

ZnO thin films with （002） orientation have been deposited on Si（100） substrate by radio frequency （RF） magnetron sputtering technique. The influence of RF power and oxygen ratio on the grain size,the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra. The results show that the crystallization of the ZnO film deposited with sputtering power （100W） and oxygen ratio（60%）, can obtain its best c-axis orientation and crystallization and tension stress of the film reaches the lowest.