低压VDMOS氧化层厚度与特征电阻的优化设计

Optimization Design between Threshold Voltage and Featured on-Resistance of VDMOS

介绍VDMOS阈值电压的定量计算及氧化层厚度对他的影响,及VDMOS的氧化层厚度与特征电阻RONA的关系,讨论了栅氧化层的厚度对特征电阻的影响并进行了简单计算。此外,讨论了最新的VDMOS结构和制造技术,对器件阈值与特征电阻进行了优化。

The paper introduces the calculation of VDMOS, then introduces the relationship between Tax and special on -resistance of VDMOS,it also discusses the effect on the To, to special on - resistance and gives the simple calculation. Furthermore,the paper discusses the optimization design of new structure and manufacture technology to threshold voltage and featured on - resistance of VDMOS.