一种低功耗抗辐照加固256kb SRAM的设计

Design of a Low Power Radiation Hardened 256kb SRAM

设计了一个低功耗抗辐照加固的256kb SRAM。为实现抗辐照加固,采用了双向互锁存储单元(DICE)结构以及抗辐照加固版图技术。提出了一种新型的灵敏放大器,采用了一种改进的采用虚拟单元的自定时逻辑来实现低功耗。与采用常规控制电路的SRAM相比,读功耗为原来的11%,读取时间加快19%。

In this paper a low power radiation hardened 256kb SRAM is presented. The Dual Interlocked storage Cell （DICE） and radiation hardened layout techniques have been implemented to achieve radiation hardened. A novel sense amplifier has been proposed and modified self-timing scheme with dummy cell for low power operation has been adopted in this SRAM. It has consumed only 11% read power dissipation and the access time can improve 19% compared with the conventional control circuit.