GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长

GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates

采用分子束外延方法在GaAs（100）衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10K光致发光谱峰值波长在2.0~2.6μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整.

GaSb thick layers were grown by molecular beam epitaxy on GaAs（100）substrates. High quality InAs/GaSb superlattices（SLs）with different InAs thicknesses were grown on GaSb buffer layers on GaAs substrates. The peak wavelengths of photoluminescence spectra at 10K are between 2~2.6μm. High-resolution transmission electron microscopy shows that the SLs have clear interface and integrated periods.