In_(0.5)Ga_(0.5)P/GaAs材料系中有序结构的研究

A Study of Ordered Ga 0 5 In 0 5 P Grown by Metalorgonic Vapor Phase Epitaxy

利用光致发光（ＰＬ），横截面透射电子显微镜（ＸＴＥＭ）对金属有机物气相外延（ＭＯＶＰＥ）生长的Ｉｎ０．５Ｇａ０．５Ｐ／ＧａＡｓ材料系中的有序结构进行了研究。实验结果指出：（１）材料中有序畴的尺寸，形状及分布特性极大地依赖于材料的生长条件；（２）材料的光学性质和结构性质有密切关系。文中提出了一个物理模型，认为有序Ｉｎ０．５Ｇａ０．５Ｐ材料是一种具有可变带尾态的Ⅱ型量子阱材料。

Microstructural and optical properties of ordered Ga 0 5 In 0 5 P epitaxial layers grown by metalorgonic vapor phase epitaxy (MOVPE) have been investigated by cross section transmission electron microscopy (XTEM) and photoluminescence (PL).The experimental results show that (1) the characteristics of ordered domains in the materials are highly dependent on growth condition.(2)there is a close relationship between optical and microstructural properties. A model is proposed,in which the ordered Ga 0 5 In 0 5 P is regarded as a type Ⅱ quantum well structure with variable band tail states and the experimental results are reasonably explained.