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SiGe和SiGeC HBT速度过冲模型 被引量：1

Velocity Overshoot Model of SiGe and SiGeC HBT's
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摘要 建立了超薄基区Si Ge和Si GeC HBT的速度过冲模型。通过求解能量平衡方程,得到电子温度分布,B-C结附近的电子温度远高于晶格温度。Ge的分布对Si Ge BHT速度分布影响很大,对于线性分布,Ge梯度越大,速度过冲越明显;Ge梯度一样时,线性分布比梯形分布的速度大。梯形分布的Si Ge HBT基区也发生速度过冲。Si GeC HBT速度过冲现象与Si Ge HBT相似。 A velocity overshoot model of ultra-thin-base SiGe and SiGeC HBT＇s is obtained. By deriving Boltzmann electron temperature equation, 3000 K maxima near collector-base junction of temperatures are found. Velocity distribution solutions considering velocity overshoot are achieved. It is concluded that different germanium content percentage determines the maxima of overshoot velocities. Base overshoot are observed, and SiGeC HBT possesses similar velocities as SiGe HBT does.
作者 蔡瑞仁 李垚
机构地区 中国科学技术大学物理系微电子实验室
出处 《微电子学》 CAS CSCD 北大核心 2007年第3期316-319,共4页 Microelectronics
关键词 速度过冲 电子温度 SIGE HBT SIGEC HBT Velocity overshoot Electron temperature SiGe HBT SiGeC HBT
分类号 TN304.26 [电子电信—物理电子学]
  • 相关文献

参考文献6

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二级参考文献11

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共引文献1

同被引文献14

  • 1蔡瑞仁,李垚,刘嵘侃.超薄基区SiGe HBT基区渡越时间能量传输模型[J].微电子学,2006,36(5):618-621. 被引量：2
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  • 10Jochen Eberhardt, Erich Kasper. Modelling of SiGe Heterobipolar Transistors:200 GHz Frequencies with Sytmmetrical Delay Times [ J ]. Solid-State Electronics,2001,45 (2001) :2097-2100.

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二级引证文献1

微电子学
2007年 第3期

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