摘要
用二次阳极氧化法制备了多孔阳极氧化铝(AAO)模板。以AAO为模板,在ZnSO4、Na2SO4和H2SeO3的混合水溶液中进行直流电沉积了ZnSe半导体纳米线。SPM、TEM测试表明,模板表面形成模孔大小一致、排列规则的阵列。ZnSe纳米线的直径约为60nm,长度约为0.5μm并与模板的孔径和深度一致。在制备过程中,无需去除AAO的基底,喷金或预镀金属等处理,直接在AAO纳米孔内电沉积,制备纳米线。该方法简单、有效并且容易获得有序的半导体纳米线阵列。
Porous anodic aluminum oxide templates （AAO） were prepared by twice anodic oxidation in the solution of oxalic acid. ZnSe nanowires were prepared in the mixed solution of ZnSO4. Na2SO4 and H2SeO3 by DC electrodeposition in the holes of AAO template. SPM. TEM examinations show surface of template formed diameter and identical array holes of full ZnSe. ZnSe nano-wires have uniform diameters of about 60 nm, and lengths up to 0.5 μm after dissolve AAO. The means of preparation nano-wires needs not dissolve the floor of AAO and plate metal. The technology is simple, efficient and easy to prepare identical semiconductor nano-wires array.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第7期14-16,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(10064066)
云南大学理(工)科校级科研资助项目(2004Q008A)
关键词
半导体技术
模板
直流电沉积
半导体纳米线阵列
semiconductor
template
DC electrodeposition
semiconductor nanowire array
