氧压对用PLD法生长氧化锌薄膜的电学特性的影响

Influence of Oxygen Pressures on Growth of ZnO Thin Films by PLD and Its Electrical Properties

本文研究了用脉冲激光沉积（PLD）法制备ZnO薄膜，给出了在不同氧压下生长氧化锌（ZnO）薄膜的XRD谱、表面的AFM图以及电阻率、迁移率、载流子浓度以及导电类型等电学特性，为探索制备P型ZnO薄膜提供实验依据。

This paper studed zinc oxide（ZnO） thin films by pulsed laser deposition（PLD）. X-ray diffraction（XRD） and atomic force microscopy（AFM） were applied to characterize the structure and surface morphology of the deposited ZnO films in different oxygen pressures. Resistivity, hall mobility and carrier density were investigated in different oxygen pressures, and all films showed n-type conduction. It offered the experimental based for growing P-type ZnO films.