脉冲激光沉积ZnO及其掺杂薄膜的研究

Investigation of ZnO and Doped ZnO Thin Films by Pulsed Laser Deposition

本文用脉冲激光沉积（PLD）法在SiO2基片上制备了ZnO薄膜和Zn1-xMnxO薄膜。X射线衍射、原子力显微镜、紫外-可见分光光度计对ZnO薄膜的测试结果表明：薄膜具有（103）面的择优取向，表面比较平坦；SiO2基片上制备的薄膜在387nm附近存在明显的吸收边，且薄膜的吸收对基片温度变化不明显。通过对Zn1-xMnxO薄膜的吸收光谱分析得出：Mn离子的掺杂改变了ZnO薄膜的禁带宽度，随Mn离子的掺杂量的增加，薄膜禁带宽度增加；薄膜的光吸收也从直接跃迁过渡为间接跃迁过程。

ZnO thin films at different substrate temperatures and Zn1-xMnxO thin films had been grown on SiO2 substrates by pulsed laser deposition（PLD）. XRD, AFM, UV-Vis spectrophotometer were employed to characterize ZnO films. Results indicated that the films had mainly （103） peaks and rather flatness surface. Absorption spectra showed that ZnO thin films had obvious absorption sides at about 378nm and evident change to substrate temperatures had not been found. Through analysis to Zn1-xMnxO thin films absorption spectrum, the results indicated that the Mn-doped changed the ZnO thin film energy gap; Along with Mn-doped quantity increase, thin film energy ga Pincreased; Thin films light absorption also transited from direct jum Pto indirect jum Pprocess.