氮气对MPCVD法金刚石薄膜性能的影响

Influences of Addition of N2 on the Properties of Diamond Films Prepared by MPCVD

在CH4和H2的混合气体中，加入N2，并不断改变其含量，用微波等离子体化学气相沉积（MPCVD）设备制备了金刚石薄膜。利用扫描电镜观察薄膜的表面形貌，用X-ray衍射方法进行物相鉴定，用Raman光谱分析薄膜的纯度。结果表明：氮气含量不同，薄膜的沉积情况也不同，由于氮气含量的变化，薄膜沉积过程中形成一种纳米聚晶金刚石薄膜，本文从氮离子轰击和晶粒生长的角度分析了氮的添加对所制备的金刚石薄膜性能的影响。

Diamond films were prepared by MPCVD in the CH4 and H2 gas mixture by addition of N2. The surface morphology of the films were tested by Scanning Electron Microscpoy（SEM）. The structure of the films were analysed by X-ray diffraction and Raman spectroscopy. The results show that the deposition of films change with the content of N2. For the variation of N2 content, in the course of depostion, the small crtstall grain will gather and form a kind of nano-glomerocryst dimond film. In this paper,we analyzed the influences of N2 on diamond films, propertiesof N2 bombardment and growth of crystal.